ISL6296A Datasheet, PDF (3/20 Pages) Intersil Corporation – FlexiHash For Battery Authentication

ISL6296A
Absolute Maximum Ratings (Reference to GND)
Supply Voltage (V_DD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
All Other Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to V_DD + 0.5V
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-25°C to +85°C
Thermal Information
Thermal Resistance (Typical)
θ_JA (°C/W) θ_JC (°C/W)
SOT-23 Package (Note 1) . . . . . . . . . . 200
N/A
2x3 TDFN Package (Notes 2, 3) . . . . .
70
10.5
Maximum Junction Temperature (Plastic Package) . . . . . . . +125°C
Maximum Storage Temperature Range . . . . . . . . . .-40°C to +125°C
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θ_JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ_JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
3. For θ_JC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
Unless otherwise noted, all parameters are established over the operational supply voltage and temperature
range of the device as follows: T_A = -25°C to +85°C; V_DD = 2.6V to 4.8V; Parameters with MIN and/or MAX
limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
MAX UNITS
DC CHARACTERISTICS
Supply Voltage
V_DD During normal operation
During OTP ROM programming
2.6
-
2.8
-
4.8
V
4.8
V
Run Mode Supply Current
(Exclude I/O Current)
I_DD V_DD = 4.2V
V_DD = 4.8V
Sleep Mode Supply Current
I_DDS V_DD = 4.2V, XSD pin floating
OTP Programming Mode Supply Current I_DDP For ~ 1.8ms duration per write operation
Internal Regulated Supply Voltage
V_RG Observable only in test mode
Internal OTP ROM Programming Voltage V_PP Observable only in test mode
POR Release Threshold
V_POR+
POR Assertion Threshold
V_POR-
XSD PIN CHARACTERISTICS
-
38
55
µA
-
40
65
µA
-
0.15
0.5
µA
-
250
500
µA
2.3 2.5
2.7
V
11
12
13
V
1.9
2.2
2.4
V
1.5
1.8
2.1
V
XSD Input Low Voltage
XSD Input High Voltage
XSD Input Hysteresis
XSD Internal Pull-Down Current
XSD Output Low Voltage
XSD Input Transition Time
XSD Output Fall Time
XSD Pin Capacitance
V_IL
V_IH
V_HYS
I_PD
V_OL
t_X
t_F
C_PIN
V_DD = 2.6V
V_DD = 4.2V
V_DD = 4.8V
I_OL = 1mA
10% to 90% transition time
90% to 10%, C_LOAD = 12pF
-0.4
-
0.5
V
1.5
- V_DD + 0.4V V
-
400
-
mV
-
0.8
-
µA
-
1.2
2.0
µA
-
1.8
2.5
µA
-
-
0.4
V
-
-
2
µs
-
-
50
ns
-
6
-
pF
3
FN6567.3
April 15, 2010