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ISL6312A Datasheet, PDF (27/35 Pages) Intersil Corporation – Four-Phase Buck PWM Controller with Integrated MOSFET Drivers for Intel VR10, VR11, and AMD Applications
ISL6312A
The total power dissipated by the upper MOSFET at full load
can now be approximated as the summation of the results
from Equations 26, 27, 28 and 29. Since the power
equations depend on MOSFET parameters, choosing the
correct MOSFETs can be an iterative process involving
repetitive solutions to the loss equations for different
MOSFETs and different switching frequencies.
Package Power Dissipation
When choosing MOSFETs it is important to consider the
amount of power being dissipated in the integrated drivers
located in the controller. Since there are a total of three
drivers in the controller package, the total power dissipated
by all three drivers must be less than the maximum
allowable power dissipation for the QFN package.
Calculating the power dissipation in the drivers for a desired
application is critical to ensure safe operation. Exceeding the
maximum allowable power dissipation level will push the IC
beyond the maximum recommended operating junction
temperature of 125°C. The maximum allowable IC power
dissipation for the 7x7 QFN package is approximately 3.5W
at room temperature. See “Layout Considerations” on
page 32 for thermal transfer improvement suggestions.
When designing the ISL6312A into an application, it is
recommended that the following calculation is used to ensure
safe operation at the desired frequency for the selected
MOSFETs. The total gate drive power losses, PQg_TOT, due to
the gate charge of MOSFETs and the integrated driver’s
internal circuitry and their corresponding average driver current
can be estimated with Equations 30 and 31, respectively.
PQg_TOT = PQg_Q1 + PQg_Q2 + IQ ⋅ VCC
(EQ. 30)
P Q g _Q1
=
3--
2
⋅
QG
1
⋅
PVC
C
⋅
FSW
⋅
NQ1
⋅
NPH
A
S
E
PQg_Q2 = QG2 ⋅ PVCC ⋅ FSW ⋅ NQ2 ⋅ NPHASE
(EQ. 31)
IDR
=
⎝⎛ 32--
⋅
QG1
⋅
N
Q1
+
QG2
⋅
NQ
⎞
2⎠
⋅ NPHASE ⋅ FSW + IQ
In Equations 30 and 31, PQg_Q1 is the total upper gate drive
power loss and PQg_Q2 is the total lower gate drive power
loss; the gate charge (QG1 and QG2) is defined at the
particular gate to source drive voltage PVCC in the
corresponding MOSFET data sheet; IQ is the driver total
quiescent current with no load at both drive outputs; NQ1 and
NQ2 are the number of upper and lower MOSFETs per phase,
respectively; NPHASE is the number of active phases. The
IQ*VCC product is the quiescent power of the controller
without capacitive load and is typically 75mW at 300kHz.
PVCC
BOOT
RHI1
RLO1
PHASE
UGATE
CGD
G
RG1
RGI1
CGS
S
D
CDS
Q1
FIGURE 16. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
PVCC
RHI2
RLO2
LGATE
CGD
G
RG2
RGI2
CGS
S
D
CDS
Q2
FIGURE 17. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
The total gate drive power losses are dissipated among the
resistive components along the transition path and in the
bootstrap diode. The portion of the total power dissipated in
the controller itself is the power dissipated in the upper drive
path resistance, PDR_UP, the lower drive path resistance,
PDR_UP, and in the boot strap diode, PBOOT. The rest of the
power will be dissipated by the external gate resistors (RG1
and RG2) and the internal gate resistors (RGI1 and RGI2) of
the MOSFETs. Figures 16 and 17 show the typical upper and
lower gate drives turn-on transition path. The total power
dissipation in the controller itself, PDR, can be roughly
estimated as:
PDR = PDR_UP + PDR_LOW + PBOOT + (IQ ⋅ VCC)
(EQ. 32)
PBOOT
=
-P----Q----g----_--Q-----1-
3
P D R _UP
=
⎛
⎜
⎝
-------------R-----H----I--1--------------
RHI1 + REXT1
+
-R----L---O-----1R----+-L---O-R----1-E----X----T---1- ⎠⎟⎞
⋅ P-----Q----g----_--Q-----1-
3
P D R _LOW
=
⎛
⎜
⎝
-------------R-----H----I--2--------------
RHI2 + REXT2
+
R-----L---O-----2R----+-L---O-R----2-E----X----T---2- ⎠⎟⎞
⋅
P-----Q----g----_---Q----2-
2
REXT1
=
RG1
+
R-----G-----I-1--
NQ1
REXT2
=
RG2
+
R-----G-----I-2--
NQ2
27
FN9290.4
April 29, 2010