ISL73841SEH Datasheet, PDF (18/23 Pages) Intersil Corporation – Radiation Tolerant 30V 32-Channel Analog Multiplexer

ISL73841SEH
Post Low Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise
specified, V± = ±12V, V_CM = 0, V_O = 0V, T_A = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This
data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits nor are they guaranteed. (Continued)
12
8
10
8
BIASED
6
6
GROUNDED
4
4
2
2
0
0
GROUNDED
-2
-2
BIASED
-4 ₀
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 47. r_DS(ON) SHIFT (V_IN = +5V) vs LDR RADIATION
-4 ₀
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 48. r_DS(ON) SHIFT (V_IN = -5V) vs LDR RADIATION
2
0
-2
-4
GROUNDED
-6
-8
-10
BIASED
-12
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 49. r_DS(ON) SHIFT (V_IN = V^-) vs LDR RADIATION
350
300 ^BIASED
250
200
GROUNDED
150
100
50
00
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 50. t_ADD SHIFT (LOW TO HIGH) vs LDR RADIATION
20
15
10
BIASED
5
0
-5
-10
GROUNDED
-15
-20
0
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 51. t_ADD SHIFT (HIGH TO LOW) vs LDR RADIATION
16
14
GROUNDED
12
10
8
BIASED
6
4
2
00
10
20
30
40
50
60
LOW DOSE RATE RADIATION (krad(Si))
FIGURE 52. t_BBM SHIFT vs LDR RADIATION
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FN8846.1
May 31, 2016