ISL70244SEH Datasheet, PDF (16/21 Pages) Intersil Corporation – Rail-to-rail input and output

ISL70244SEH
Post High Dose Rate Radiation Characteristics Unless otherwise specified, V_S ± 19.8V,
V_CM = 0, V_O = 0V, T_A = +25°C. This data is typical mean test data post radiation exposure at a high dose rate of 50 to 300rad(Si)/s. This data is
intended to show typical parameter shifts due to high dose rate radiation. These are not limits nor are they guaranteed.
10
8
V_S = ±19.8V
6
4
GROUNDED
2
0
30
20
GROUNDED
10
0
V_S = ±19.8V
-2
BIASED
-4
BIASED
-10
-6
-8
-10
0
50
100
150
200
250
300
krad(Si)
-20
-30
0
50
100
150
200
250
300
krad(Si)
FIGURE 51. V_OS SHIFT vs HIGH DOSE RATE RADIATION
FIGURE 52. I_BIAS+ SHIFT vs HIGH DOSE RATE RADIATION
40
V_S = ±19.8V
30
20
10
BIASED
0
-10
-20
GROUNDED
-30
-400
50
100
150
200
250
300
krad(Si)
FIGURE 53. I_BIAS- SHIFT vs HIGH DOSE RATE RADIATION
2.0
V_S = ±19.8V
1.5
1.0
BIASED
0.5
0
-0.5
GROUNDED
-1.0
-1.5
-2.0
0
50
100
150
200
250
300
krad(Si)
FIGURE 54. I_OS SHIFT vs HIGH DOSE RATE RADIATION
0.80
0.60
V_S = ±19.8V
0.40
0.20
GROUNDED
0.00
-0.20
-0.40
BIASED
-0.60
-0.80
0
50
100
150
200
250
300
krad(Si)
FIGURE 55. I+ vs HIGH DOSE RATE RADIATION
0.80
0.60
V_S = ±19.8V
0.40
BIASED
0.20
0.00
-0.20
GROUNDED
-0.40
-0.60
-0.80 ₀
50
100
150
200
250
300
krad(Si)
FIGURE 56. I- vs HIGH DOSE RATE RADIATION
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FN8592.2
September 1, 2016