X28HC256 Datasheet, PDF (14/15 Pages) Xicor Inc. – 5 Volt, Byte Alterable E2PROM

CE Controlled Write Cycle
Address
CE
OE
WE
t_AS
t_OES
t_CS
X28HC256
t_WC
t_AH
t_CW
t_OEH
t_CH
Data In
Data Out
Page Write Cycle
OE⁽⁹⁾
Data Valid
t_DS
t_DH
HIGH Z
CE
WE
Address⁽¹⁰⁾
t_WP
t_BLC
t_WPH
I/O
Last Byte
Byte 0
Byte 1
Byte 2
Byte n
Byte n+1
*For each successive write within the
writes to an unknown address could
page write
occur.
operation,
A₇–A₁₅
should
be
the
same
or
Byte n+2
t_WC
Notes: (9) Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH
to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a
polling operation.
(10)The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to
either the CE or WE controlled write cycle timing.
14
FN8108.1
May 17, 2006