ISL71590SEH Datasheet, PDF (14/16 Pages) Intersil Corporation – Radiation Hardened

ISL71590SEH
Package Characteristics
Weight of Packaged Device
0. 07Grams (Typical)
Lid Characteristics
Finish: Gold
Potential: Floating
Case Isolation to Any Lead: 10 x 10⁹ Ω (minimum)
Die Characteristics
Die Dimensions
1185µm x 1695µm (46.7 mils x 66.7 mils)
Thickness: 254µm ±25.4µm (10 mils ±1 mil)
Interface Materials
GLASSIVATION
Type: Nitrox
Thickness: 15kÅ
Metallization Mask Layout
TOP METALLIZATION
Type: AlCu (99.5%/0.5%)
Thickness: 30kÅ
BACKSIDE FINISH
Silicon
ASSEMBLY RELATED INFORMATION
SUBSTRATE POTENTIAL
Tied to V- pin
ADDITIONAL INFORMATION
WORST CASE CURRENT DENSITY
<5 x 10³A/cm²
PROCESS
Dielectrically Isolated Bipolar SOI - PR40
TRANSISTOR COUNT
92
PAD NAME
PIN NUMBER
V+
1
V-
2
NOTES:
9. Origin of coordinates is the centroid of pad 1.
10. Bond wire size is 1.25 mil.
V+ (1)
X
(µm)
0
823
V- (2)
Y
(µm)
0
0
X
(µm)
110
110
Y
(µm)
110
110
BOND WIRES
PER PAD
1
1
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June 3, 2016
FN8376.2