ISL7457SRH Datasheet, PDF (10/12 Pages) Intersil Corporation – Radiation Hardened, SEE Hardened, Non-Inverting, Quad CMOS Driver

ISL7457SRH
Die Characteristics
DIE DIMENSIONS:
2390 µm x 2445 µm (94.1 mils x 96.3 mils)
Thickness:13.0 mils ±0.5 mil
INTERFACE MATERIALS
Glassivation
Type: PSG and Silicon Nitride
Thickness: 0.5 µm ± 0.05 µm to 0.7 µm +/- 0.05 µm
Top Metallization
Type: AlCuSi (1%/0.5%)
Thickness: 1.0 µm +/-0.1 µm
Metallization Mask Layout
INA
Substrate:
Type: Silicon
Isolation: Junction
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
V_s-
ADDITIONAL INFORMATION
Worst Case Current Density:
< 2 x 10⁵ A/cm² (See Figure 10)
Transistor Count:
1142
ISL7457SRH
V_S+
OE
INB
V_L
GND
DELAY
INC
10
IND
V_S-
OUTA
OUTB
V_H
OUTC
OUTD
FN6874.0
March 16, 2009