ISL71091SEH10 Datasheet, PDF (1/16 Pages) Intersil Corporation – 10V Radiation Hardened Ultra Low Noise

DATASHEET
10V Radiation Hardened Ultra Low Noise, Precision
Voltage Reference
ISL71091SEH10
The ISL71091SEH10 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 12V to 30V. It uses Intersil’s advanced bipolar technology
to achieve 14.8µV_P-P 0.1Hz to 10Hz noise with an initial
voltage accuracy of 0.05%.
The ISL71091SEH10 offers a 10.0V output voltage option with
6ppm/°C temperature coefficient and also provides excellent
line and load regulation. The device is offered in an 8 Ld
flatpack package.
The ISL71091SEH10 is ideal for high-end instrumentation,
data acquisition and processing applications requiring high DC
precision where low noise performance is critical.
Applications
• Precision voltage sources for data acquisition system for
space application
• Strain and pressure gauge for space applications
• Radiation hardened PWM requiring precision outputs
Related Literature
• AN1906, “ISL71091SEHXXEV1Z User’s Guide”
• AN1938, “Single Event Effects (SEE) Testing of the
ISL71091SEHxx Precision Voltage References Family”
• AN1939, “Total Dose Testing of the ISL71091SEHxx
Precision Voltage Reference”
Features
• Reference output voltage . . . . . . . . . . . . . . . . . 10.0V ±0.05%
• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . ±0.15%
• Accuracy over radiation . . . . . . . . . . . . . . . . . . . . . . . . ±0.25%
• Output voltage noise . . . . .14.8µV_P-P typical (0.1Hz to 10Hz)
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . .300µA (typical)
• V_OS temperature coefficient . . . . . . . . . . 6ppm/°C maximum
• Output current capability . . . . . . . . . . . . . . . . . . . 10mA/-5mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . 5ppm/V maximum
• Load regulation (sourcing) . . . . . . . . . 15ppm/mA maximum
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB free (V_CC = 36V) . . . . . . . . . . . . 86MeV•cm²/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
• Electrically screened to SMD 5962-14208
VIN
0.1µF
ISL71091SEH10
1
DNC
2
VIN
3 _COMP
1nF ₄
GND
8
DNC
7
DNC
VOUT ⁶
5
TRIM
VREF
1µF
C
REFIN DACOUT
VDD
VDD
D12
VEE
VEE
D0
1.1k
NOTE: Select C to minimize
settling time.
BIPOFF
GND
HS-565BRH
FIGURE 1. ISL71091SEH10 TYPICAL APPLICATION DIAGRAM
10.014
10.010
10.006
10.002
UNIT 1
UNIT 2
UNIT 3
9.998
9.994
UNIT 4
UNIT 5
9.990
-65 -45 -25
-5 15 35 55 75
TEMPERATURE (°C)
95 115 135
FIGURE 2. V_OUT vs TEMPERATURE
March 17, 2016
1
FN8633.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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