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| SKW20N60_08 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKW20N60
600ns
500ns
400ns
300ns
200ns
IF = 40A
IF = 10A
IF = 20A
100ns
0ns
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
24A
20A
IF = 40A
16A
12A
IF = 20A
IF = 10A
8A
4A
0A
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
2500nC
2000nC
1500nC
1000nC
500nC
IF = 40A
IF = 20A
IF = 10A
0nC
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
1000A/µs
800A/µs
600A/µs
400A/µs
200A/µs
0 A /µs
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Rev. 2_2 Sep 08
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