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| SKW20N60_08 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKW20N60
25V
20V
Ciss
1nF
15V
120V
480V
10V
Coss
100pF
Crss
5V
0V
0nC 25nC 50nC 75nC 100nC 125nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 20A)
10pF
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25µs
20µs
15µs
10µs
5µs
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
350A
300A
250A
200A
150A
100A
50A
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ⤠600V, Tj = 150°C)
8
Rev. 2_2 Sep 08
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