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| SKW20N60_08 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKW20N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Diode thermal resistance,
junction â case
Thermal resistance,
junction â ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
0.7
K/W
1.3
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=20A
Tj=25°C
Tj=150°C
VGE=0V, IF=20A
Tj=25°C
Tj=150°C
IC=700µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=20A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=20A
VGE=15V
VGE=15V,tSCâ¤10µs
VCC ⤠600V,
Tj ⤠150°C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.4
1.4
1.25
4
-
-
-
14
1100
107
63
100
13
200
Unit
max.
-V
2.4
2.9
1.8
1.65
5
µA
40
2500
100 nA
-S
1320 pF
128
76
130 nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2_2 Sep 08
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