SKW20N60_08 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKW20N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t _b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =900pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=200V, I_F=20A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
36
30
225
54
0.44
0.33
0.77
300
30
270
490
5.5
180
Unit
max.
46 ns
36
270
65
0.53 mJ
0.43
0.96
- ns
-
-
- nC
-A
- A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t _b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =900pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=200V, I_F=20A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
36
30
250
63
0.67
0.49
1.12
410
45
365
1270
8.5
200
Unit
max.
46 ns
36
300
76
0.81 mJ
0.64
1.45
- ns
-
-
- nC
-A
- A/µs
1) _{Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.}
3
Rev. 2_2 Sep 08