SED10HB100 Datasheet, PDF (9/18 Pages) Solid States Devices, Inc – Schottky Rectifier

ESD3V3U4ULC
Characteristics
Table 4 RF characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Line capacitance
C_L
–
0.4
0.65
pF
–
0.2
0.35
pF
Note /
Test Condition
V_R = 0 V, f = 1 MHz,
I/O to GND
V_R = 0V, f = 1 MHz,
I/O to I/O
Table 5 ESD characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note /
Test Condition
Reverse clamping
voltage¹⁾ [2]
Forward clamping
voltage¹⁾ [2]
Reverse dynamic
resistance¹⁾ [2]
V_CL
–
–
V_FC
–
–
R_{dyn, rev} –
9
–
12
–
6
–
10
–
0.2
–
V
I_PP = 16 A
V
I_PP = 30 A
V
I_PP = 16 A
V
I_PP = 30 A
Ω
Forward dynamic
R_{dyn, fwd} –
0.25
–
Ω
resistance ¹⁾[2]
1) Please refer to Application Note AN210. TLP parameter: Z₀ = 50 Ω , t_p = 100ns, t_r = 300ps, averaging window: t₁ = 30 ns
to t₂ = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistic between I_PP1 = 10 A and
I_PP2 = 40 A.
Preliminary Data Sheet
9
Revision 0.9, 2010-10-14