SED10HB100 Datasheet, PDF (12/18 Pages) Solid States Devices, Inc – Schottky Rectifier

70
35
60
30
50
25
40
20
30
15
R_dyn=0.2Ω
20
10
10
0
0
Figure 7
5
ESD3V3U4ULC
R_dyn
0
5
10 15 20 25
TLP Voltage (V)
Reverse TLP characteristic^Note: [2]
0
0
-10
-5
-20
-10
-30
-15
-40
-20
R_dyn=0.25Ω
-50
-25
-60
-70
-25
Figure 8
-30
ESD3V3U4ULC
R_dyn
-20 -15 -10 -5
-35
0
TLP Voltage (V)
Forward TLP characteristic^Note: [2]
ESD3V3U4ULC
Characteristics
Note: TLP parameter: Z₀ = 50 Ω, t_p = 100 ns, t_r = 300 ps, averaging window: t₁ = 30 ns to t₂ = 60 ns, extraction of
dynamic resistance using least squares fit of TLP charactertistic between I_PP1 = 10 A and I_PP2 = 40 A. The
equivalent stress level V_IEC according IEC 61000-4-2 (R = 330 Ω , C = 150 pF) is calculated at the broad
peak of the IEC waveform at t = 30 ns with 2 A / kV
Preliminary Data Sheet
12
Revision 0.9, 2010-10-14