SED10HB100 Datasheet, PDF (8/18 Pages) Solid States Devices, Inc – Schottky Rectifier

3
Characteristics
ESD3V3U4ULC
Characteristics
Table 2 Maximum Rating at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
ESD contact discharge¹⁾
V_ESD
-20
–
Peak pulse current (t_p = 8/20 µs)²⁾ I_PP
-3
–
Operating temperature
T_OP
-40
–
Storage temperage
T_stg
-65
–
1)V_ESD according to IEC61000-4-2
2)I_PP according to IEC61000-4-5
Max.
20
3
125
150
Unit
kV
A
°C
°C
3.1
Electrical Characteristics at T_A = 25 °C, unless otherwise specified
V_F Forward voltage
I_F
R_{diff, rev} Differential reverse series resistance
I_F Forward current
V_R Reverse voltage
V_R
IR Reverse current
Rdiff, fwd Differential forward series resistance
I_PP
V_Trig Triggering reverse voltage
Rdiff, fwd
V_CL Clamping voltage
V_Hold Holding reverse voltage
V_Trig
V_Hold V_RWM
V_R
V_CL
I_RWM
V_FC
I_Trig
V_RWM Reverse working voltage maximum
V_F
V_FC Forward clamping voltage
I_Trig Triggering reverse current
R_{diff, rev}
I_Hold
V_F
-I_PP
I_Hold Holding reverse current
I_PP Peak pulse current
I_RWM Reverse working current maximum
Figure 2
I_R
Definitions of electrical characteristics[1]
Diode _Characteristic_Curve_with_snapback.vsd
Table 3 DC characteristics at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Reverse working voltage V_RWM –
–
3.3
V
Reverse current
I_R
–
1
50
nA
Note /
Test Condition
I/O to GND
V_R = 3.3 V,
I/O to GND
Preliminary Data Sheet
8
Revision 0.9, 2010-10-14