PXAC261212FC_16 Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

PXAC261212FC
Package Outline Specifications
Package H-37248-4
2X 4.83±0.51
[.190±0.020]
2X 45° X 2.72
[45° X .107]
FLANGE 9.78
[.385]
LID 9.40
[.370]
(8.89
[.350])
CL
(5.08
[.200])
D1
D2
4X R0.76+-00.3.183
[
R.030
+0.005
-0.015
]
19.43±0.51
CL
[.765±0.020]
G1
G2
SPH 1.57
[.062]
2X 12.70
[.500]
19.81±0.20
[.780±0.008]
4X 3.81
[.150]
1.02
[.040]
0.0381 [.0015] -A-
H-37248-4_po_02_01-09-2013

3.76±0.25
[.148±0.010]
CL
S
20.57
[.810]
Diagr_Dam_iagN_rao_mtes_N—_otu_en_sl_—es_us_no_leth_se_sr_ow_ti_hs_ee_rwsp_ise_eci_sfi_pe_ed_c: _ified:
1. ₁In_. te_Ir_np_tr_ee_rt_pd_reim_t e_dn_imsi_eo_nn_ss_ioa_nn_sd_at_no_dler_toa_ln_ec_re_as_ncp_ee_sr _pA_eS_rM_AE_SMY1_E4_Y.5₁M_4.-₅1_M99_-14₉. _94.
2. ₂P_.rim_Pa_rr_imy _ad_rim_y e_dn_imsi_eo_nn_ss_ioa_nr_se _am_rem_m. A_mlt_.e_Arn_lta_et_re_nad_tim_e e_dn_imsi_eo_nn_ss_ioa_nr_se _ain_rc_eh_ie_ns_c._hes.
3. ₃A_.ll t_Aol_le_l r_toa_ln_ec_re_as_nc±_es0._±12₀7_.1[₂.0₇0_[5_.0] ₀u₅n_]le_. ss specified otherwise.
4. ₄P_.ins_P:_iD_ns1_:,_DD₁2_, –_D2dr_–ai_dn_rs_a;_iG_n,1_G, G_1,2_G–₂g_–at_ge_as_t;_eS_{, S}– _– s_so_ou_urc_rce_e. _.
5. ₅L_.ea_Ld_et_ah_dick_thn_ie_cs_ks_n:_e0_s._s1_:0_0.+₁₀0.₊0₀7_.6₀/₇–₆0_/._–0₀2_.5₀₂m₅m_[.0[0₀.₄00₊4_.0+₀0₃.0_/–0_.3₀/₀–₁0_]._.001 inch].
6. ₆G_.old_Gp_ol_la_dti_pn_lg_att_inh_gick_thn_ie_cs_ks_n:_e1_s._s1_:4_1.±₁₄0._±38_0.m₃₈icr_mon_icr[_o4_n5 _[±₄₅15_±m₁₅icr_moi_in_crc_oh_i]_n._ch].
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet
9 of 10
Rev. 02.2, 2016-06-22