PXAC261212FC_16 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

PXAC261212FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10.0
µA
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
µA
On-state Resistance
(main)
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.19
—
W
(peak)
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.16
—
W
Operating Gate Voltage (main)
V_DS = 28 V, I_DQ = 280 mA
V_GS
2.1
2.6
3.1
V
(peak)
V_DS = 28 V, I_DQ = 0 A
V_GS
0.80
1.3
1.8
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 100 W CW)
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.61
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXAC261212FC V1 R0
PXAC261212FC V1 R250
Order Code
PXAC261212FCV1R0XTMA1
PXAC261212FCV1R250XTMA1
Package and Description
H-37248-4, ceramic open-cavity, earless
H-37248-4, ceramic open-cavity, earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.2, 2016-06-22