PXAC261212FC_16 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

Typical Performance (cont.)
CW Performance
at various V_DD
I_DQ = 280 mA, ƒ = 2605 MHz
22.5
70
Efficiency
20.0
60
17.5
50
Gain
15.0
40
12.5
30
10.0
7.5
5.0
29
V_DD = 24 V
20
V_DD = 28 V
10
V_DD = 32 V
c261212fc-gr5b
0
33 37 41 45 49 53
Output Power (dBm)
PXAC261212FC
CW Performance
at various V_DD
I_DQ = 280 mA, ƒ = 2575 MHz
22.5
70
Efficiency
20.0
60
17.5
50
Gain
15.0
40
12.5
30
10.0
7.5
5.0
29
V_DD = 24 V
20
V_DD = 28 V
10
V_DD = 32 V
c261212fc-gr5a
0
33 37 41 45 49 53
Output Power (dBm)
Small Signal CW Performance
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 280 mA
17
0
16
-5
15
Gain
14
-10
IRL
-15
13
2500
2550
2600 2650 2700
Frequency (MHz)
c261212fc-gr6
-20
2750
Data Sheet
5 of 10
Rev. 02.2, 2016-06-22