PXAC261212FC_16 Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz

Reference Circuit (cont.)
Assembly Information (cont.)
Component
Description
Output
C201, C215, C216
Chip capacitor, 10 pF
C202, C204, C211, C208 Chip capacitor, 0.5 pF
C203
Capacitor, 220 µF
C205, C209, C210, C212, Chip capacitor, 4.7 µF
C213, C214
C206
Chip capacitor, 0.3 pF
C207
Chip capacitor, 3.9 pF
Pinout Diagram (top view)
S
D1
D2
Main
G1
Peak
G2
H-37248-4_pd_10-10-2012
PXAC261212FC
Manufacturer
P/N
ATC
ATC
Cornell Dubilier Electronics (CDE)
Murata Electronics North America
ATC
ATC
ATC600F100JW250T
ATC600F0R5CW250T
SK221M050ST
GRM32ER71H475KA88L
ATC600F0R3CW250T
ATC600F3R9CW250T
Pin Description
D1
Drain device 1 (main)
D2
Drain device 2 (peak)
G1
Gate device 1 (main)
G2
Gate device 2 (peak)
S
Source (flange)
Data Sheet
8 of 10
Rev. 02.2, 2016-06-22