PTFB091507FH_16 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz

PTFB091507FH
Reference Circuit (cont.)
Microstrip
Characteristics
TL215
0.021 l, 20.9 W
TL216
0.041 l, 20.9 W
TL217
0.008 l, 39.1 W
TL218
0.016 l, 16.5 W
TL219
0.011 l, 39.1 W
TL220
0.016 l, 20.9 W
TL221
0.037 l, 5.7 W
TL222
0.016 l, 16.5 W
TL223
0.011 l, 5.7 W

TL228
0.021 l, 16.5 W
TL230
0.006 l, 51.5 W
TL231
0.060 l, 51.5 W
TL232
0.027 l, 51.5 W
TL233
0.006 l, 51.5 W
TL234
0.041 l, 20.9 W
TL235
0.010 l, 51.5 W
TL236
0.014 l, 20.9 W
TL237
0.052 l, 5.7 W
TL238
0.021 l, 16.5 W
TL239
0.021 l, 20.9 W
TL240
0.007 l, 20.9 W
Dimensions: mm
W1 = 3.81, W2 = 3.81, W3 = 3.81
W = 3.81, L = 7.29
W = 1.68, L = 1.52
W = 5.08, L = 2.90
W = 1.68, L = 2.03
W1 = 3.81, W2 = 3.81, W3 = 2.79
W = 16.51, L = 6.38
W = 5.08, L = 2.89
W1 = 16.51, W2 = 1.83, W3 = 16.51,
W4 = 1.83
W1 = 5.08, W2 = 5.08, W3 = 3.81
W = 1.10, L = 1.14
W = 1.10, L = 11.3
W = 1.10, L = 5.08
W = 1.10, L = 1.12
W = 3.81, L = 7.29
W1 = 1.10, W2 = 1.10, W3 = 1.91
W = 3.81, L = 2.51
W = 16.51, L = 8.89
W1 = 5.08, W2 = 5.08, W3 = 3.81
W1 = 3.81, W2 = 3.81, W3 = 3.81
W1 = 3.81, W2 = 3.81, W3 = 1.27
Dimensions: mils
W1 = 150, W2 = 150, W3 = 150
W = 150, L = 287
W = 66, L = 60
W = 200, L = 114
W = 66, L = 80
W1 = 150, W2 = 150, W3 = 110
W = 650, L = 251
W = 200, L = 114
W1 = W1, W2 = 72, W3 = 650,
W4 = 72
W1 = 200, W2 = 200, W3 = 150
W = 44, L = 45
W = 44, L = 445
W = 44, L = 200
W = 44, L = 44
W = 150, L = 287
W1 = 44, W2 = 44, W3 = 75
W = 150, L = 99
W = 650, L = 350
W1 = 200, W2 = 200, W3 = 150
W1 = 150, W2 = 150, W3 = 150
W1 = 150, W2 = 150, W3 = 50
Data Sheet
9 of 13
Rev. 03.1, 2016-06-09