PTFB091507FH_16 Datasheet, PDF (5/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz

Typical Performance (cont.)
Single-carrier WCDMA Drive-up
940 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
20
60
PAR*
0
45
Efficiency
-20
30
-40
ACPR
Gain ¹⁵
-60
0
42
44
46
48
50
Average Output Power (dBm)
PTFB091507FH
Single-carrier WCDMA Drive-up
940 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
20
8
0
PAR* ⁶
-20
4
-40
2
ACPR
-60
42
44
46
48
Average Output Power (dBm)
0
50
Single-carrier WCDMA Drive-up
920 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
20
60
PAR*
0
45
Efficiency
-20
30
-40
ACPR
Gain ¹⁵
-60
0
42
44
46
48
50
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
920 MHz
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
20
8
0
PAR* ⁶
-20
4
-40
ACPR
-60
42
44
46
48
Average Output Power (dBm)
2
0
50
*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve
Data Sheet
5 of 13
Rev. 03.1, 2016-06-09