PTFB091507FH_16 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz

PTFB091507FH
Thermally-Enhanced High Power RF LDMOS FET
160 W, 28 V, 920 – 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in multi-
standard cellular power amplifier applications in the 920 to 960 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excel-
lent thermal performance and superior reliability.
PTFB091507FH
Package H-34288-4/2
Power Sweep, CW
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 960 MHz,
21.0
20.5
Gain
20.0
19.5
19.0
18.5
18.0
41
Efficiency
43 45 47 49 51
Output Power (dBm)
70
60
50
40
30
20
10
53
Features
• Broadband internal matching
• Wide video bandwidth
• Typical CW performance, 960 MHz, 28 V
- Average output power = 160 W
- Gain = 19.5 dB
- Efficiency = 60%
• Integrated ESD protection
• Low thermal resistance
• Thermally enhanced package is Pb-free and RoHS
compliant
• Capable of handling 10:1 VSWR @ 28 V, 160 W
(CW) output power
RF Characteristics
Single-carrier WCDMA Specifications (not subject to production test; verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 50 W average
ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Gps
—
20
—
dB
hD
—
38
—
%
Adjacent Channel Power Ratio
ACPR
—
–36
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03.1, 2016-06-09