PTFB091507FH_16 Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz

PTFB091507FH
Package Outline Specifications
Package H-34288-4/2
45° X 2.032
[45° X .080]
2X 30°
V
CL
4X
R0.508
+.381
-.127
[^{R.020+-.0.00155} ]
22.860
[.900]
CL
D
G
2X 12.700
[.500]
22.352±.200
[.880±.008]
2X 5.080
[.200]
2X 1.143
[.045]
V
4.889±.510
[.192±.020]
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
4.039
+.254
-.127
[^{.159+-.0.00150}]
1.575
[.062] (SPH)
1.016
[.040]
H-34288-4/2_po_03_08-13-2012
CL
23.114
[.910]
S


Diagram Notes—unless otherwise specified:
D¹ia^.gra^Inm^teN^rpo^rt^ee^ts^d—^imu^enⁿle^ss^iosⁿo^sth^aeⁿr^dwi^ts^oe^les^rapⁿe^cc^eifi^sed^p:^{er ASME Y14.5M-1994.}
2. P₁r_.ima_Inry_ted_rpim_ree_tn_ds_ii_mon_es_nsa_ir_oe_nsm_am_n._dA_tl_ote_lern_raa_nte_ced_sim_pee_rns_Ai_Son_Ms_Ea_Yre₁₄in_.5ch_Me_-s₁._994.
3. A₂l_.l tol_Pe_rr_ia_mn_ac_re_ys_d±_im0._e1_n2_s7_io[0_n._s00_a5_re] u_mn_mle_.s_As_lts_ep_re_nc_ai_tf_eie_dd_imot_eh_ne_sr_iw_oi_ns_se._{are inches.}
4. P₃i_.ns:_AD_ll–_tod_lera_rain_n;_cG_es–_±g₀a_.1te₂;₇S_[.–₀₀s₅o_]u_urc_ne_le;_sV_s–_spV_{eDcDified otherwise.}
5. L₄e_. ad_Pth_inic_sk_:n_Des_-s_d:_r0_a._in1_;0_S+_-0_s._o0_u5_r1_c/_e–_;0_G.02_- 5_gam_tem_{; V}[0_-.0_V0_D4_D+_. 0.002/–0.001 inch].
6. G_5.old _Lp_ela_at_ding_thit_ch_kic_nk_en_se_ss_:s₀:_.10₀.2₊5₀m_.0ic₅r₁o_/–n₀[_.1₀0₂₅m_micr_moin_[.c₀h₀]₄m₊a₀x_.0. _{02/–0.001 inch].}
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 03.1, 2016-06-09