PTFA210601E Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz

PTFA210601E
PTFA210601F
Package Outline Specifications (cont.)
Package H-37265-2
2.59±0.51
[.102±.020]
(45° X 2.03
[.080])
CL
D
LID 10.16±0.25
[.400±.010]
FLANGE 10.16
[.400]
CL
10.16
[.400]
15.34±.51
[.604±.020]
SPH 1.57
[.062]
G
2X 7.11
[.280]
LID
10.16±0.25
[.400±.010]
FLANGE
4X R0.63
[R.025] MAX
3.56±.38
[.140±.015]
S
10.16
[.400]
1.02
[.040]
|0.025 [.001]|-A-
071119_h-36+37265_POs_h-37265-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch].
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Data Sheet
9 of 10
Rev. 03, 2007-11-19