PTFA210601E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz

Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 550 m A, f = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-25
35
-30
30
Efficiency
-35
25
-40
20
-45
-50
-55
32
ACPR Up ¹⁵
10
ACPR Low
5
34 36 38 40 42 44
Average Output Power (dBm)
PTFA210601E
PTFA210601F
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 550 m A, f = 2140 MHz, P_OUT (PEP) = 47.8 dBm ,
tone spacing = 1 MHz
-10
55
-15
-20
-25
IM3 Up
-30
-35
-40
50
Efficiency ⁴⁵
40
35
30
25
Gain ²⁰
15
-45
10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V, I_DQ = 550 m A, f = 2140 MHz,
P_OUT = 47.8 dBm PEP
-20
-25 3rd Order
-30
-35
5th
-40
-45
-50 _7th
-55
05
10 15 20 25 30 35 40
Tone Spacing (MHz)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.56 A
1.11 A
1.67 A
2.22 A
2.78 A
3.33 A
3.89 A
4.44 A
5.00 A
0.96
-20
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 03, 2007-11-19