PTFA210601E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz

PTFA210601E
PTFA210601F
Typical Performance (data taken in a production test fixture)
Broadband Performance
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 41 dBm
40
-5
35
-10
Return Loss
30
-15
25
-20
Efficiency
20
-25
15
-30
Gain
10
-35
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
2-Tone Drive-up
V_DD = 28 V, I_DQ = 550 mA,
f = 2140 MHz, tone spacing = 1 MHz
-25
45
-30
Efficiency
40
-35
-40 ^IM3
35
IM5
30
-45
25
-50
20
-55
IM7 ¹⁵
-60
10
-65
5
35 37 39 41 43 45 47 49
Output Power, PEP (dBm)
Two-carrier WCDMA at Selected Biases
V_DD = 28 V, f = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
-40 ^{650 mA}
450 mA
500 mA
-45
-50
-55
31
600 mA
550 mA
33 35 37 39 41 43
Output Power, PEP (dBm)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 550 mA, f = 2170 MHz
17 ^TCASE ^{= 25°C}
65
T_CASE = 90°C
16
55
15 Gain
45
14
35
13
12
0
25
Efficiency
15
10 20 30 40 50 60 70
Output Power (W)
Data Sheet
3 of 10
Rev. 03, 2007-11-19