PTFA210601E Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz

PTFA210601E
PTFA210601F
Reference Circuit
C0.1001µF
R2
1.3K V
R1
1.2K _V
QQ1
LM7805
Q1
BCP56
C0.2001µF _C03.001µF
R2K3_V
R2K4_V
VDD
1R05_V
1C04µF
35V
1RK6V
.C1µ5F 1RK7V
1RK8V
.C16µF
.C071µF
1C08pF
l7
R9
10 V
RF_IN
C9
10pF
l1
l2
l6
l3
l4
DUT
l5
C10
1.5pF
1C01p1F
.C0122µF 1Cµ1F3
VDD
C1µ1F4
C.11µ5F
2C21µ6F
50V
l10
l8
l9
C18
10pF
l11
l12
l13
C17
0.7pF
RF_OUT
a210601ef _sch
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PCB
PTFA210601E or PTFA210601F
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Microstrip Electrical Characteristics at 2140 MHz¹
l1
0.030 λ, 50.0 Ω
l2
0.038 λ, 50.0 Ω
l3
0.146 λ, 50.0 Ω
l4
0.049 λ, 6.2 Ω
l5
0.016 λ, 6.2 Ω
l6
0.009 λ, 80.0 Ω
l7
0.112 λ, 80.0 Ω
l8
0.018 λ, 8.5 Ω
l9
0.105 λ, 8.5 Ω
l10
0.173 λ, 67.0 Ω
l11
0.051 λ, 41.0 Ω
l12
0.077 λ, 41.0 Ω
l13
0.032 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
2.54 x 1.52
3.15 x 1.52
12.32 x 1.52
3.81 x 22.78
1.17 x 22.78
0.74 x 0.69
9.78 x 0.69
1.35 x 16.26
8.08 x 16.26
14.83 x 1.02
4.11 x 2.29
6.35 x 2.29
2.79 x 1.52
Dimensions: L x W (in.)
0.100 x 0.060
0.124 x 0.060
0.485 x 0.060
0.150 x 0.897
0.046 x 0.897
0.029 x 0.027
0.385 x 0.027
0.053 x 0.640
0.318 x 0.640
0.584 x 0.040
0.162 x 0.090
0.250 x 0.090
0.110 x 0.060
Data Sheet
6 of 10
Rev. 03, 2007-11-19