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HYS64V16300GU Datasheet, PDF (9/20 Pages) Infineon Technologies AG – 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
HYS 64/72V16300/32220GU
SDRAM-Modules
AC Characteristics 3), 4)
TA = 0 to 70 °C; VSS = 0 V; VDD = 3.3 V ±0.3 V, tT = 1 ns
Parameter
Symbol
Limit Values
Unit Note
-7
-7.5
-8
PC133-222 PC133-333 PC100-222
min. max. min. max. min. max.
Clock and Access Time
Clock Cycle Time
tCK
CAS Latency = 3
CAS Latency = 2
System Frequency
fCK
CAS Latency = 3
CAS Latency = 2
Clock Access Time
tAC
CAS Latency = 3
CAS Latency = 2
Clock High Pulse Width
tCH
Clock Low Pulse Width
tCL
Setup & Hold Parameters
Input Setup Time
tIS
Input Hold Time
tIH
Power Down Mode Entry
tSB
Time
Power Down Mode Exit
tPDE
Setup Time
Mode Register Setup Time tRSC
Transition Time (rise and fall) tT
Common Parameters
RAS to CAS Delay
tRCD
Precharge Time
tRP
Active Command Period
tRAS
Cycle Time
tRC
Bank-to-Bank Delay Time tRRD
7.5 –
7.5 –
10
7.5 –
10 –
10
–
133 –
133 –
–
133 –
100 –
–
5.4 –
5.4 –
–
5.4 –
6
–
2.5 –
2.5 –
3
2.5 –
2.5 –
3
–
–
ns
–
ns
–
100 MHz
100 MHz
4), 5)
6
ns
6
ns
–
ns
6)
–
ns
6)
1.5 –
1.5 –
2
–
ns
7)
0.8 –
0.8 –
1
–
ns
7)
–
1
–
1
–
1
CLK 8)
1
–
1
–
1
–
CLK 9)
2
–
2
–
2
–
CLK
1
–
1
–
1
–
ns –
15 –
20 –
20 –
ns –
15 –
20 –
20 –
ns –
42 100k 45 100k 50 100k ns –
60 –
67.5 –
70 –
ns –
14 –
15 –
16 –
ns –
INFINEON Technologies
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