HYS64V16300GU Datasheet, PDF (7/20 Pages) Infineon Technologies AG – 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules

HYS 64/72V16300/32220GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to V_SS
V_IN, V_OUT – 1.0
4.6
Power supply voltage on V_DD
V_DD
– 1.0
4.6
Storage temperature range
T_STG
-55
+150
Power dissipation per SDRAM component
P_D
–
1
Data out current (short circuit)
I_OS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
o_C
W
mA
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V_DD = 3.3 V ±0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (I_OUT = – 4.0 mA)
Output Low Voltage (I_OUT = 4.0 mA)
Input Leakage Current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < V_OUT < V_DD)
Symbol
V_IH
V_IL
V_OH
V_OL
I_I(L)
Limit Values
min.
max.
2.0
–0.5
V_DD + 0.3
0.8
2.4
–
–
0.4
–40
40
I_O(L)
–40
40
Unit
V
V
V
V
µA
µA
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ±0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
max. max. max.
16M×64 16M×72 32M×64
Input Capacitance
C_I1
65
72
105
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input Capacitance (CS0 - CS3)
C_CS
32
40
35
Input Capacitance (CLK0 - CLK3)
C_CLK
38
40
42
Input Capacitance (CKE0, CKE1)
C_CKE
65
72
65
Input Capacitance (DQMB0 - DQMB7)
C_I4
13
13
20
Input/Output Capacitance
(DQ0 - DQ63, CB0 - CB7)
C_IO
10
10
17
Input Capacitance (SCL, SA0-2)
Input/Output Capacitance
C_SC
8
8
8
C_SD
8
8
8
max.
32M×72
144
43
45
72
20
17
8
8
Unit
pF
pF
pF
pF
pF
pF
pF
pF
INFINEON Technologies
7
9.01