HYS64V16300GU Datasheet, PDF (10/20 Pages) Infineon Technologies AG – 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules

HYS 64/72V16300/32220GU
SDRAM-Modules
AC Characteristics (cont’d) ^{3), 4)}
T_A = 0 to 70 °C; V_SS = 0 V; V_DD = 3.3 V ±0.3 V, t_T = 1 ns
Parameter
Symbol
Limit Values
Unit Note
-7
-7.5
-8
PC133-222 PC133-333 PC100-222
min. max. min. max. min. max.
CAS to CAS Delay Time
t_CCD
1
–
1
–
1
–
CLK –
(same bank)
Refresh Cycle
Refresh Period (4096 cycles) t_REF
–
Self-Refresh Exit Time
t_SREX
1
Read Cycle
Data Out Hold Time
t_OH
3
Data Out to Low Impedance t_LZ
0
Data Out to High Impedance t_HZ
3
DQM Data Out Disable
Latency
t_DQZ
–
64 –
–
1
–
3
–
0
7
3
2
–
64 –
–
1
–
3
–
0
7
3
2
–
64 ms
–
CLK ¹⁰⁾
–
ns
4)
–
ns –
8
ns
11
2
CLK –
Write Cycle
Data Input to Precharge
t_WR
2
–
2
–
2
–
CLK –
(write recovery)
DQM Write Mask Latency t_DQW
0
–
0
–
0
–
CLK –
INFINEON Technologies
10
9.01