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| SGW02N120_06 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGW02N120
20V
15V
10V
UCE=960V
5V
0V
0nC
5nC
10nC
15n
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 2A)
Ciss
100pF
Coss
10pF
0V
Crss
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
30µs
40A
25µs
30A
20µs
15µs
20A
10µs
10A
5µs
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V â¤VCE â¤1200V, TC = 25°C, Tj ⤠150°C)
Power Semiconductors
8
Rev. 2.1 Feb 06
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