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SGW02N120_06 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGW02N120
12A
Ic
10A
TBD 8A
TC=80°C
6A
TC=110°C
4A
2A
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ⤠150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 91â¦)
10A
tp=10µs
TBD50µs
1A
150µs
500µs
0.1A
20ms
DC
0.01A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ⤠150°C)
60W
50W
40W
30W
20W
10W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ⤠150°C)
7A
6A
5A
4A
3A
2A
1A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ⤠15V, Tj ⤠150°C)
Power Semiconductors
4
Rev. 2.1 Feb 06
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