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SGW02N120_06 Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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Figure A. Definition of switching times
SGW02N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
rr
90% I
R
rrm
Figure C. Definition of diodes
switching characteristics
Ï1
r1
Tj (t)
p(t)
r1
Ï2
r2
r2
Ïn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
10
Figure E. Dynamic test circuit
Leakage inductance LÏ =180nH,
and stray capacity CÏ =40pF.
Rev. 2.1 Feb 06
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