SGW02N120_06 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGW02N120
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
1.5mJ
1.0mJ
E_ts*
E_on*
0.5mJ
E_off
0.0mJ
0A
2A
4A
6A
8A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 9 1 Ω,
dynamic test circuit in Fig.E )
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
0.3mJ
E_on*
0.2mJ
0.1mJ
E_off
0.0mJ
-50°C 0°C 50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 2A, R_G = 9 1Ω,
dynamic test circuit in Fig.E )
0.5mJ
*) Eon and Ets include losses
due to diode recovery.
0.4mJ
E_ts*
0.3mJ
E_on*
0.2mJ
0.1mJ
E_off
0.0mJ
0Ω
50Ω
100Ω
150Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 2A,
dynamic test circuit in Fig.E )
D=0.5
10⁰K/W
0.2
0.1
0.05
10^-1K/W
0.02
R,(K/W)
0.66735
0.70472
0.62778
τ, (s)
0.04691
0.00388
0.00041
0.01
R1
R2
10^-2K/W
single pulse _{C1=τ1/ R1 C2=τ2/R2}
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
Power Semiconductors
7
Rev. 2.1 Feb 06