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PXFC192207FH_16 Datasheet, PDF (8/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
PXFC192207FH
Package Outline Specifications
Package H-37288G-4/2
D 45° x .64
[.025]
2X
30.0°
21.72
[.855]
CL
4X 3.49±0.51
[.138±.020]
V
D
V
1.98
[.078]
2X 2.29
[.090]
9.78
CL
[.385]
CL
16.76±0.51
[.660±.020]
4X
R0.51
+.38
-.13
[
R.020
] +.015
-.005
4.04+-00.1.235
[.159+-.0.00150 ]
SPH 1.57
[.062]
S
G
CL
2X 17.75
[.699]
22.35±0.20
[.880±.008]
23.11
[.910]
H-37288G-4/2_sl_po_01_07-18-2013
1.02
[.040]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – VDD.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 04.1, 2016-06-22