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PXFC192207FH_16 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz
PXFC192207FH
Thermally-Enhanced High Power RF LDMOS FET
220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207FH is a 220-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V,IDQ = 1600 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
30
60
1930 MHz
25
1960 MHz
50
1990 MHz
20
40
Gain
15
30
10
20
5
0
30
10
Efficiency
35
40
45
c192207fh_g1
50
0
55
Output Power (dBm)
PXFC192207FH
Package H-37288G-4/2
Features
• Broadband input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V,
16 µs pulse width, 10 % duty cycle, class AB
- Output power at P1dB = 220 W
- Efficiency = 55%
- Gain = 20 dB
• Typical single-carrier WCDMA performance, 1990
MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR
- Output power = 50 W
- Efficiency = 29%
- Gain = 20 dB
- ACPR = –34 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 1600 mA, POUT = 50 W avg, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
Min Typ
19
20.5
29
32
—
–32.5
Max
—
—
–29
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 04.1, 2016-06-22