PXFC192207FH_16 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz

PXFC192207FH
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA,
ƒ = 1990 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-5
60
IMD Low
-15
IMD Up
50
ACPR
Efficiency
-25
40
-35
30
-45
20
-55
10
-65
30
0
c192207fh_g2
35
40
45
50
55
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10
1930 IMDL
1930 IMDU
1960 IMDL
1960 IMDU
-15
1990 IMDL
1990 IMDU
-20
-25
-30
-35
-40
-45
-50
c192207fh_g3
30
35
40
45
50
55
Output Power (dBm)
Pulsed CW Performance
I_DQ = 1600 mA, V_DD = 28 V
22
1990 MHz
60
1960 MHz
21
1930 MHz
50
20
40
19
Gain
30
18
20
17
Efficiency
10
16
30
c192207fh_g5
0
35
40
45
50
55
Output Power (dBm)
Pulsed CW Performance
at various V_DD
I_DQ = 1600 mA, ƒ = 1990 MHz
22
VDD = 24 V
60
VDD = 28 V
21
VDD = 32 V
50
20
40
Gain
19
30
18
20
Efficiency
17
10
16
30
c192207fh_g4
0
35
40
45
50
55
Output Power (dBm)
Data Sheet
3 of 9
Rev. 04.1, 2016-06-22