PXFC192207FH_16 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 – 1990 MHz

PXFC192207FH
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXFC192207FH
Test Fixture Part No.
LTN/PXFC192207FH V3
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, ε_r = 3.66, ƒ = 1930 – 1990 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Description
Input
C101
Capacitor, 10 μF
C102, C103
Capacitor, 33 pF
C801, C802, C803 Capacitor, 1000 pF
R101, R102, R801 Resistor, 10 Ω
R802
Resistor, 100 Ω
R803
Resistor, 1300 Ω
R804
Resistor, 1200 Ω
S1
Transistor
S2
Voltage Regulator
S3
Potentiometer, 2k Ω
Output
C201, C202, C204, Capacitor, 10 μF
C206, C208, C209
C203, C207
Capacitor, 220 μF
C205
Capacitor, 33 pF
Suggested Manufacturer
Taiyo Yuden
ATC
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Infineon Technologies
Texas Instruments
Bourns Inc.
Taiyo Yuden
Panasonic Electronic Components
ATC
P/N
UMK325C7106MM-T
ATC100A330JW150XB
ECJ-1VB1H102K
ERJ-8GEYJ100V
ERJ-8GEYJ101V
ERJ-3GEYJ132V
ERJ-3GEYJ122V
BCP56
LM78L05ACM
3224W-1-202E
UMK325C7106MM-T
EEE-FP1V221AP
ATC100A330JW150XB
Data Sheet
7 of 9
Rev. 04.1, 2016-06-22