BFP720_12 Datasheet, PDF (8/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

2
Features
• High performance general purpose wideband LNA transistor
• Operation voltage: 1.0 V to 4.0 V
• Transistor geometry optimized for low-current applications
• 26 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
3
• 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
4
• High linearity OP_1dB = 8.5 dBm and OIP₃ = 23 dBm at 5.5 GHz
and low current consumption of 13 mA
• Easy to use Pb-free (RoHS compliant) and halogen-free standard
package with visible leads
• Qualification report according to AEC-Q101 available
BFP720
Features
2
1
Applications
FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone,
UMTS, WLAN,UWB, LNB
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP720
Package
SOT343
1=B
Pin Configuration
2=E
3=C
4=E
Marking
R9s
Data Sheet
8
Revision 1.1, 2012-10-19