BFP720_12 Datasheet, PDF (21/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

BFP720
Electrical Characteristics
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
I = 13mA
C
0.4
I = 5.0mA
C
0.3
0.2
0.1
0
0 1 2 3 4 5 6 7 8 9 10
f [GHz]
Figure 5-8 Noise Figure NF_min = f (f), V_CE = 3 V, Z_S = Z_opt
42
40
0.15GHz
38
36
34
0.45GHz
32
0.90GHz
30
1.50GHz
28
1.90GHz
26
2.40GHz
24
3.50GHz
22
20
5.50GHz
18
16
10.00GHz
14
12
10
0
5
10
15
20
25
30
I [mA]
C
Figure 5-9 Power Gain G_ma, G_mS = f (I_C), V_CE = 3 V, f = Parameter in GHz
Data Sheet
21
Revision 1.1, 2012-10-19