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BFP720_12 Datasheet, PDF (22/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor | |||
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BFP720
Electrical Characteristics
40
38
0.15GHz
36
34
0.45GHz
32
30
0.90GHz
28
1.50GHz
26
1.90GHz
2.40GHz
24
3.50GHz
22
20
5.50GHz
18
16
10.00GHz
14
12
10
8
6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V [V]
CE
Figure 5-10 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves
Data Sheet
22
Revision 1.1, 2012-10-19
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