BFP720_12 Datasheet, PDF (18/25 Pages) Infineon Technologies AG – Low Noise Silicon Germanium Bipolar RF Transistor

5.4
Characteristic Curves
BFP720
Electrical Characteristics
50
45
3V
40
2V
35
30
25
20
15
10
5
0
1
1V
0.5 V
10
100
Ic [mA]
Figure 5-2 Transition Frequency f_T = f (I_C, V_CE), f = 1 GHz, V_CE = Parameter in V
42
39
36
33
30
G
ms
27
24
21
18
|S |2
21
15
G
ma
12
9
6
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 5-3 Power Gain G_ma, G_ms, |S₂₁|² = f (f), V_CE = 3 V, I_C = 13 mA
Data Sheet
18
Revision 1.1, 2012-10-19