IKW30N65H5 Datasheet, PDF (7/17 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW30N65H5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=15.0A,
diF/dt=1100A/µs
Tvj=150°C,
VR=400V,
IF=5.0A,
diF/dt=1030A/µs
- 113 - ns
- 0.93 - µC
- 15.8 - A
- -145 - A/µs
-
70
- ns
- 0.52 - µC
- 14.2 - A
- -255 - A/µs
7
Rev.2.1,2015-05-06