IKW30N65H5 Datasheet, PDF (12/17 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW30N65H5
Highspeedswitchingseriesfifthgeneration
1E+4
1000
Cies
Coes
Cres
100
10
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
1
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.001
1E-6
i:
1
2
3
4
ri[K/W]: 0.1299033 0.1766063 0.2480626 0.2454278
τi[s]: 1.0E-4
1.1E-3
9.7E-3
0.09645982
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
140
Tj=25°C, IF = 15A
130
Tj=150°C, IF = 15A
1
D=0.5
120
0.2
110
0.1
0.05
100
0.1
0.02
0.01
90
single pulse
80
0.01
70
60
0.001
1E-7
1E-6
i:
1
2
3
4
ri[K/W]: 0.5085472 0.4834926 0.6496018 0.3583585
τi[s]: 9.7E-5
9.3E-4
5.9E-3
0.05885063
1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
50
40
500 1000 1500 2000 2500 3000 3500
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.2.1,2015-05-06