IKW30N65H5 Datasheet, PDF (10/17 Pages) Infineon Technologies AG – High speed switching series fifth generation

1000
td(off)
tf
td(on)
tr
100
10
IKW30N65H5
Highspeedswitchingseriesfifthgeneration
100
td(off)
tf
td(on)
tr
10
1
5
15
25
35
45
55
65
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=15A,rG=23Ω,Dynamictestcircuitin
Figure E)
6.0
typ.
5.5
min.
max.
5.0
5.0
Eoff
4.5
Eon
Ets
4.0
4.5
3.5
4.0
3.0
3.5
2.5
3.0
2.0
2.5
1.5
2.0
1.0
1.5
0.5
1.0
0
25
50
75
100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
0.0
0
10 20 30 40 50 60 70 80 90
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.3mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=23Ω,Dynamictestcircuitin
Figure E)
10
Rev.2.1,2015-05-06