IKW30N65H5 Datasheet, PDF (11/17 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW30N65H5
Highspeedswitchingseriesfifthgeneration
1.0
Eoff
0.9
Eon
Ets
0.8
0.7
0.6
0.8
Eoff
Eon
0.7
Ets
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.0
5
15
25
35
45
55
65
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
0.0
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=15A,rG=23Ω,Dynamictestcircuitin
Figure E)
0.7
Eoff
Eon
Ets
0.6
16
130V
520V
14
12
0.5
10
0.4
8
0.3
6
0.2
4
0.1
2
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
0 10 20 30 40 50 60 70 80
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=15/0V,
IC=15A,rG=23Ω,Dynamictestcircuitin
Figure E)
Figure 16. Typicalgatecharge
(IC=30A)
11
Rev.2.1,2015-05-06