HYS64V64220GU Datasheet, PDF (7/15 Pages) Infineon Technologies AG – 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules

HYS 64/72V64220GU
SDRAM-Modules
AC Characteristics ^{1), 2)}
T_A = 0 to 70 °C; V_SS = 0 V; V_DD = 3.3 V ± 0.3 V, t_T = 1 ns
Parameter
Symbol
Limit Values
Unit Note
-7
-7.5
-8
PC133-222 PC133-333 PC100-222
min. max min. max. min. max.
Clock
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
System Frequency
CAS Latency = 3
CAS Latency = 2
Clock Access Time
CAS Latency = 3
CAS Latency = 2
t_CK
–
7.5 – 7.5 – 10 – ns
7.5 – 10 – 10 – ns
f_CK
–
– 133 – 133 – 100 MHz
– 133 – 100 – 100 MHz
t_AC
3), 4)
– 5.4 – 5.4 – 6 ns
– 5.4 – 6 – 6 ns
Clock High Pulse Width
Clock Low Pulse Width
t_CH
2.5 –
t_CL
2.5 –
Setup and Hold Times
Input Setup Time
t_CS
Input Hold Time
t_CH
Power Down Mode Entry Time
t_SB
Power Down Mode Exit Setup Time t_PDE
Mode Register Setup Time
t_RSC
Transition Time (rise and fall)
t_T
1.5 –
0.8 –
–1
1–
2–
1–
Common Parameters
RAS to CAS Delay
t_RCD 15 –
Precharge Time
t_RP
15 –
Active Command Period
t_RAS 42 –
Cycle Time
t_RC
60 –
Bank to Bank Delay Time
t_RRD 14 –
CAS to CAS Delay Time (same bank) t_CCD 1
–
2.5 –
3
–
ns ⁴⁾
2.5 –
3
–
ns ⁴⁾
1.5 –
2
–
ns ⁵⁾
0.8 –
1
–
ns ⁵⁾
–
1
–
1
CLK ⁶⁾
1
–
1
–
CLK ⁷⁾
2 – 2 – CLK
1 – 1 – ns –
20 – 20
20 – 20
45 100k 50
67.5 – 70
15 – 16
1–1
– ns –
– ns –
100k ns –
– ns –
– ns –
– CLK –
INFINEON Technologies
7
9.01