HYS64V64220GU Datasheet, PDF (5/15 Pages) Infineon Technologies AG – 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules

HYS 64/72V64220GU
SDRAM-Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Input / Output voltage relative to V_SS
V_IN, V_OUT – 1.0
4.6
Power supply voltage on V_DD
V_DD
– 1.0
4.6
Storage temperature range
T_STG
-55
+150
Power dissipation per SDRAM component
P_D
–
1
Data out current (short circuit)
I_OS
–
50
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Unit
V
V
o_C
W
mA
DC Characteristics
T_A = 0 to 70 °C; V_SS = 0 V; V_DD = 3.3 V ± 0.3 V
Parameter
Input High Voltage
Input Low Voltage
Output High Voltage (I_OUT = – 4.0 mA)
Output Low Voltage (I_OUT = 4.0 mA)
Input Leakage Current, any input
(0 V < V_IN < 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V < V_OUT < V_DD)
Symbol
Limit Values
min.
max.
V_IH
2.0
V_IL
– 0.5
V_OH
2.4
V_OL
–
I_I(L)
– 40
V_DD + 0.3
0.8
–
0.4
40
Unit
V
V
V
V
µA
I_O(L)
– 40
40
µA
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input Capacitance
(A0 to A11, BA0, BA1, RAS, CAS, WE)
Input Capacitance (CS0 - CS3)
Input Capacitance (CLK0 - CLK3)
Input Capacitance (CKE0, CKE1)
Input Capacitance (DQMB0 - DQMB7)
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7)
Input Capacitance (SCL, SA0-2)
Input/Output Capacitance
Symbol
C_I1
Limit Values
max.
max.
64M × 64 64M × 72
105
144
Unit
pF
C_I2
32
40
pF
C_ICL
40
43
pF
C_I3
65
72
pF
C_I4
20
25
pF
C_IO
17
17
pF
C_SC
8
8
pF
C_SD
8
8
pF
INFINEON Technologies
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