BFP740_09 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

Power gain G_ma, G_ms = ƒ (V_CE)
I_C = 25 mA
f = parameter
36
32
0.90GHz
28
1.80GHz
2.40GHz
24
3.00GHz
4.00GHz
20
5.00GHz
6.00GHz
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V [V]
CE
Noise figure F = ƒ(I_C)
V_CE = 3V, f = 1.8 GHz
BFP740
Noise figure F = ƒ(I_C)
V_CE = 3V, f = parameter
Z_S = Z_Sopt
2
1.8
1.6
f = 6GHz
1.4
f = 5GHz
f = 3GHz
1.2
f = 1.8GHz
f = 0.9GHz
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
I [mA]
c
Noise figure F = ƒ(f)
V_CE = 3 V, Z_S = Z_Sopt
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Z = 50Ω
S
Z =Z
S
Sopt
5
10
15
20
25
30
I [mA]
c
1.4
1.2
1
0.8
0.6
I = 25mA
C
0.4
I = 8mA
C
0.2
0
0
1
2
3
4
5
6
7
f [GHz]
2009-12-04
7