BFP740_09 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFP740
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 25 mA, V_CE = 3 V, f = 2 GHz
Collector-base capacitance
C_cb
V_CB = 3 V, f = 1 MHz, V_BE = 0 ,
emitter grounded
-
42
- GHz
- 0.08 0.14 pF
Collector emitter capacitance
V_CE = 3 V, f = 1 MHz, V_BE = 0 ,
base grounded
C_ce
- 0.24 -
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz, V_CB = 0 ,
collector grounded
C_eb
- 0.44 -
Noise figure
F
dB
I_C = 8 mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
I_C = 8 mA, V_CE = 3 V, f = 6 GHz, Z_S = Z_Sopt
Power gain, maximum stable¹⁾
I_C = 25 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt , f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 25 mA, V_CE = 3 V, Z_S = Z_Sopt,
Z_L = Z_Lopt, f = 6 GHz
Transducer gain
I_C = 25 mA, V_CE = 3 V, Z_S = Z_L = 50 Ω,
f = 1.8 GHz
G_ms
G_ma
|S_21e|²
-
0.5
-
- 0.85 -
-
27
- dB
-
17
- dB
dB
- 24.5 -
f = 6 GHz
- 13.5 -
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 25 mA, Z_S=Z_L=50 Ω, f = 1.8 GHz
1dB Compression point at output
I_C = 25 mA, V_CE = 3 V, Z_S=Z_L=50 Ω, f = 1.8 GHz
IP₃
P_-1dB
-
25
- dBm
-
11
-
1_{Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2009-12-04
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